IndiumV3, Chine, Analysis, bibRecord, 000F59

Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder

Identifieur interne : 000F59 ( Chine/Analysis ); précédent : 000F58; suivant : 000F60

Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder

Auteurs : RBID : Pascal:10-0269071

Descripteurs français

Pascal (Inist)
- Circuit intégré monolithique, Composé binaire, Semiconducteur III-V, Indium Phosphure, Composé minéral, Technologie avancée, Haute performance, Modulation déplacement phase en quadrature, Modulation déplacement phase différentielle, Transpondeur, Consommation électricité, Diminution coût, Phosphure d'indium, Composé III-V, In P, InP, 0130C, 8540.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Advanced technology, Binary compound, Cost lowering, Differential phase shift keying, Electric power consumption, High performance, III-V compound, III-V semiconductors, Indium Phosphides, Indium phosphide, Inorganic compound, Monolithic integrated circuit, Quadrature phase shift keying, Transponder.

Abstract

Advanced InP technology is the enabling technology to achieve monolithic integrated 300-pin MSA compatible 43 Gb/s (RZ-)DQPSK transponder module with high performance. The integrated platform offers footprint, power, and cost reduction for next generation products.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 004432
to stream Main, to step Repository: 005983
to stream Chine, to step Extraction: 000F59

Links to Exploration step

Pascal:10-0269071

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder</title>
<author><name>JINYU MO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Oclaro Technology (Shenzhen) Co Ltd, 2 Phoenix Road, Futian Free Trade Zone</s1>
<s2>Shenzhen, 518038</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shenzhen, 518038</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Griffin, Robert" uniqKey="Griffin R">Robert Griffin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Oclaro Technology plc, Caswell, Towcester</s1>
<s2>Northamptonshire NN12 8EQ</s2>
<s3>GBR</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Northamptonshire NN12 8EQ</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Goodall, Thomas" uniqKey="Goodall T">Thomas Goodall</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Oclaro Technology plc, Westfield Business Park, Long Road</s1>
<s2>Paignton TQ4 7AU</s2>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Paignton TQ4 7AU</wicri:noRegion>
</affiliation>
</author>
<author><name>ZHENG HE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Oclaro Technology (Shenzhen) Co Ltd, 2 Phoenix Road, Futian Free Trade Zone</s1>
<s2>Shenzhen, 518038</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shenzhen, 518038</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0269071</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 10-0269071 INIST</idno>
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<idno type="wicri:Area/Chine/Extraction">000F59</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Advanced technology</term>
<term>Binary compound</term>
<term>Cost lowering</term>
<term>Differential phase shift keying</term>
<term>Electric power consumption</term>
<term>High performance</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium Phosphides</term>
<term>Indium phosphide</term>
<term>Inorganic compound</term>
<term>Monolithic integrated circuit</term>
<term>Quadrature phase shift keying</term>
<term>Transponder</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Circuit intégré monolithique</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium Phosphure</term>
<term>Composé minéral</term>
<term>Technologie avancée</term>
<term>Haute performance</term>
<term>Modulation déplacement phase en quadrature</term>
<term>Modulation déplacement phase différentielle</term>
<term>Transpondeur</term>
<term>Consommation électricité</term>
<term>Diminution coût</term>
<term>Phosphure d'indium</term>
<term>Composé III-V</term>
<term>In P</term>
<term>InP</term>
<term>0130C</term>
<term>8540</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Advanced InP technology is the enabling technology to achieve monolithic integrated 300-pin MSA compatible 43 Gb/s (RZ-)DQPSK transponder module with high performance. The integrated platform offers footprint, power, and cost reduction for next generation products.</div>
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<fA11 i1="04" i2="1"><s1>ZHENG HE</s1>
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<fA12 i1="01" i2="1"><s1>HE (Jian-Jun)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Oclaro Technology (Shenzhen) Co Ltd, 2 Phoenix Road, Futian Free Trade Zone</s1>
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<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Oclaro Technology plc, Caswell, Towcester</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Oclaro Technology plc, Westfield Business Park, Long Road</s1>
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<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>Advanced InP technology is the enabling technology to achieve monolithic integrated 300-pin MSA compatible 43 Gb/s (RZ-)DQPSK transponder module with high performance. The integrated platform offers footprint, power, and cost reduction for next generation products.</s0>
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<s5>63</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Modulation déplacement phase différentielle</s0>
<s5>64</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Differential phase shift keying</s0>
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<s5>65</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Transponder</s0>
<s5>65</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Radiobaliza</s0>
<s5>65</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Consommation électricité</s0>
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<fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>68</s5>
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<s5>68</s5>
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<s5>68</s5>
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<fC03 i1="15" i2="X" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>75</s5>
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<s4>INC</s4>
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<fN44 i1="01"><s1>OTO</s1>
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</record>

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{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:10-0269071
   |texte=   Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder
}}

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Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder

Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri